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RB060M-30
Diodes
Schottky barrier diode
RB060M-30
Applications General rectification External dimensions (Unit : mm)
1.60.1 0.10.1 0.05
Land size figure
1.2 0.85
Features 1)Small power mold type. (PMDU) 2) Low IR 3) High reliability Construction Silicon epitaxial planar
0.90.1
2.60.1
3.50.2
PMDU
Structure
0.80.1
ROHM : PMDU JEDEC :SOD-123 Manufacture Date
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.550.05 1.750.1 0.250.05
3.50.05
8.00.2
1.810.1
4.00.1
1.00.1
3.710.1
1.5MAX
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Limits Symbol VRM 30 VR 30 2 Io IFSM 55 150 Tj -55 to +150 Tstg (*1)Tc=65 MAX. Mounted on epoxy board. 180Half sine wave Unit V V A A
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current ESD break down voltage Symbol VF1 VF2 IR ESD Min. 0.32 0.36 7 Typ. 0.4 0.44 10 Max. 0.45 0.49 50 Unit V V A kV Conditions IF=1.0A IF=2.0A VR=30V C=200pF , R=0forward and reverse : 1 time
3.05
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RB060M-30
Diodes
Electrical characteristic curves
10 Ta=75 Ta=125 1000000 100000 Ta=150 Ta=125 1000 f=1MHz
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
Ta=150 Ta=25 0.1 Ta=-25 0.01
10000 1000 100 10 1 0.1 Ta=-25 Ta=75 Ta=25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1
100
0.001 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
0.01 0 5 10 15 20 25 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS
10 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30
470
100 Ta=25 IF=2A n=30pcs 90 Ta=25 VR=30V n=30pcs
400 390 380 Ta=25 f=1MHz VR=0V n=10pcs AVE:374.4pF
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
460
REVERSE CURRENT:IR(uA)
80 70 60 50 40 30 20 10 AVE:7.26uA
370 360 350 340 330 320 310 300
450
440 AVE:449.1mV
430
420 VF DISPERSION MAP
0 IR DISPERSION MAP
Ct DISPERSION MAP
300
30
100 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 90 Ifsm 8.3ms 8.3ms 1cyc
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150 100 50 0
Ifsm
1cyc 8.3ms
RESERVE RECOVERY TIME:trr(ns)
25 20 15 10 5 0
80 70 60 50 40 30 20 10 0 1
AVE:68.2A
AVE:9.8ns
IFSM DISRESION MAP 200 Ifsm
trr DISPERSION MAP
10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
1000
Mounted on epoxy board
3 Rth(j-a) D=1/2 DC
PEAK SURGE FORWARD CURRENT:IFSM(A)
150
t
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
100
100
Rth(j-c) 10
IM=100mA IF=1A
FORWARD POWER DISSIPATION:Pf(W)
2
Sin(180)
1
50
1
1ms
time
300us
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 1 2 3 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 4 5
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RB060M-30
Diodes
5 5 0A 0V DC Io 5 0A 0V DC 3 D=1/2 2 Sin(180) 1 Io t T VR D=t/T VR=15V Tj=150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
3 DC 2 Sin(180) 1
D=1/2
3
T
2
D=1/2
1
Sin(180)
0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve (Io-Ta)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
4
4
t
REVERSE POWER DISSIPATION:PR (W)
VR D=t/T VR=15V Tj=150
4
0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve (Io-Tc) 150
30
No break at 30kV
ELECTROSTATIC DISCHARGE TEST ESD(KV)
25 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:13.2kV
ESD DISPERSION MAP
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Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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